Mobility and Traps Effect in Semiconducting Polymer by Mobility Models

Authors

  • Muhammad Ammar Khan Khan Department of Physical and Numerical Sciences, Qurtuba University of Science & Information Technology, D. I. Khan, Pakistan
  • Ahmad Neyaz Khan Department of Computer Application, Integral University, Lucknow, India
  • Amr S. Zalhaf Electrical Power and Machines Engineering Department, Tanta University, Tanta 31511, Egypt

Keywords:

organic diode, non-symmetric barriers, Gauss traps, Einstein relationship

Abstract

We apply three different mobility models named exponential model of Pai, mobility edge model with single Gaussian DOS, and double Gauss model to one organic diode with polymer poly(3-hexylthiophene) (P3HT). These three models are different from one another with respect to their function. The results obtained from three different models are well explained in this paper by acquiring the suitable parameters, and gives satisfactory agreement between theoretical results and experimental data. When the parameter and results of these models are compared with one another the modified double Gauss model agrees well with the experimental J-V data at high and low voltages. While exponential model of Pai and mobility edge model with single Gaussian DOS shows the abnormality condition in mobility range.

Additional Files

Published

2021-08-03

Issue

Vol. 2 No. 2 (2021): The Sciencetech

Section

Articles